• DocumentCode
    683118
  • Title

    Theoretical study of Zn and Cd interstitials and substitutional interstitials in CuInSe2 via hybrid functional calculations

  • Author

    Kiss, J. ; Roma, Guido ; Felser, C.

  • Author_Institution
    Max Planck Inst. for Chem. Phys. of Solids, Dresden, Germany
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Firstpage
    1983
  • Lastpage
    1986
  • Abstract
    We have investigated the formation of Zn and Cd interstitials in the CuInSe2 solar cell material via density-functional-theory (DFT) calculations by employing the HSE06 hybrid functional. The computed formation energies for Zn interstitials were in the range of 2.09-2.68 e V, and in the range of 2.04-2.25 eV for substitutional interstitials. In constrast, the formation energies of Cd interstitials and substitutional interstitials were between 1.85-2.75 eV and 2.41-2.64 eV, respectively. Thus, these results indicate, that Cd interstitials are more likely to be formed than Zn interstitials, and that in case of Zn inclusion into CuInSe2 Zn atoms will prefer to adopt substitutional interstitial arrangements.
  • Keywords
    cadmium; copper compounds; density functional theory; inclusions; indium compounds; interstitials; solar cells; ternary semiconductors; zinc; CuInSe2:Zn,Cd; DFT calculations; HSE06 hybrid functional method; Zn inclusion; computed formation energy; density-functional-theory calculations; electron volt energy 1.85 eV to 2.75 eV; hybrid functional calculations; solar cell materials; substitutional interstitial arrangements; Crystals; Discrete Fourier transforms; Doping; Photonic band gap; Photovoltaic cells; Zinc; Cd and Zn interstitial defects; CuInSe2; DFT calculations; photovoltaic cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.2013.6744860
  • Filename
    6744860