DocumentCode
683118
Title
Theoretical study of Zn and Cd interstitials and substitutional interstitials in CuInSe2 via hybrid functional calculations
Author
Kiss, J. ; Roma, Guido ; Felser, C.
Author_Institution
Max Planck Inst. for Chem. Phys. of Solids, Dresden, Germany
fYear
2013
fDate
16-21 June 2013
Firstpage
1983
Lastpage
1986
Abstract
We have investigated the formation of Zn and Cd interstitials in the CuInSe2 solar cell material via density-functional-theory (DFT) calculations by employing the HSE06 hybrid functional. The computed formation energies for Zn interstitials were in the range of 2.09-2.68 e V, and in the range of 2.04-2.25 eV for substitutional interstitials. In constrast, the formation energies of Cd interstitials and substitutional interstitials were between 1.85-2.75 eV and 2.41-2.64 eV, respectively. Thus, these results indicate, that Cd interstitials are more likely to be formed than Zn interstitials, and that in case of Zn inclusion into CuInSe2 Zn atoms will prefer to adopt substitutional interstitial arrangements.
Keywords
cadmium; copper compounds; density functional theory; inclusions; indium compounds; interstitials; solar cells; ternary semiconductors; zinc; CuInSe2:Zn,Cd; DFT calculations; HSE06 hybrid functional method; Zn inclusion; computed formation energy; density-functional-theory calculations; electron volt energy 1.85 eV to 2.75 eV; hybrid functional calculations; solar cell materials; substitutional interstitial arrangements; Crystals; Discrete Fourier transforms; Doping; Photonic band gap; Photovoltaic cells; Zinc; Cd and Zn interstitial defects; CuInSe2; DFT calculations; photovoltaic cells;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC.2013.6744860
Filename
6744860
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