Feasibility study of homojunction CIGS solar cells

Author

Nakagawa, Naoyuki ; Shibasaki, Soichiro ; Hiraga, H. ; Yamazaki, M. ; Yamamoto, Koji ; Sakurada, Shinya

Author_Institution

Corp. R&D Center, Toshiba Corp., Kawasaki, Japan

fYear

2013

fDate

16-21 June 2013

Firstpage

2023

Lastpage

2025

Abstract

The potential for high conversion efficiency of the homojunction Cu(In, Ga)Se₂ (CIGS) solar cells was examined by device simulations and experimental approaches. The simulation results showed that many electrons in n-CIGS layers could compensate to some extent for the existence of interface states at i-ZnO/n-CIGS interfaces in the homojunction structure. In the case of using the partial electrolyte treatments of CIGS films to produce the n-type doping, the concentrations of the Cd dopants in the n-CIGS layer were 10¹⁶ cm^-2. The conversion efficiency of 17.2% for this homojunction CIGS solar cell was obtained.

Keywords

II-VI semiconductors; copper compounds; electrolytes; gallium compounds; indium compounds; interface states; semiconductor junctions; semiconductor thin films; solar cells; ternary semiconductors; wide band gap semiconductors; zinc compounds; Cu(InGa)Se₂; ZnO; device simulations; efficiency 17.2 percent; high conversion efficiency; homojunction CIGS solar cells; homojunction structure; interface states; n-CIGS layers; n-type doping; partial electrolyte treatments; Doping; Electrodes; Films; Heterojunctions; Interface states; Photovoltaic cells; Semiconductor process modeling; CIGS; homojunction; interface state; n-type doping; solar cell;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744869

Filename

6744869