DocumentCode
683144
Title
Preferential N-H bond orientation in GaAsN grown by chemical beam epitaxy
Author
Ikeda, Ken-ichi ; Inagaki, Masashi ; Kojima, Nobuhiko ; Ohshita, Yoshio ; Yamaguchi, Masaki
Author_Institution
Toyota Technol. Inst., Nagoya, Japan
fYear
2013
fDate
16-21 June 2013
Firstpage
2092
Lastpage
2094
Abstract
Two N-H local vibration modes at 961 and 2952 cm-1 in GaAsN grown by the chemical beam epitaxy have the same preferential N-H bond orientation. The integrated IR absorption intensities showed the two-fold rotational symmetry in (001) plane, which means that the N-H bond directions tend to align along [1-10] in (001) plane. However, the vibration modes at 961 and 2952 cm-1 were indicated to belong to the different types of N-H complexes. Therefore, the different types of N-H complexes have the same preferential N-H bond orientation.
Keywords
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; rotational states; vibrational modes; (001) plane; GaAsN; IR absorption intensities; N-H bond orientation; N-H local vibration modes; chemical beam epitaxy; two-fold rotational symmetry; Absorption; Chemicals; Metals; Molecular beam epitaxial growth; Photovoltaic cells; Vibrations; GaAsN; N-H defect; bond orientation; chemical beam epitaxy; local vibration mode;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC.2013.6744886
Filename
6744886
Link To Document