DocumentCode :
683153
Title :
Resistance considerations for stacked small multi-junction photovoltaic cells
Author :
Tauke-Pedretti, Anna ; Cederberg, Jeffrey ; Nielson, Gregory ; Cruz-Campa, Jose Luis ; Sanchez, Cesar ; Alford, Charles ; Okandan, Murat ; Skogen, Erik ; Lentine, Anthony
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
2013
fDate :
16-21 June 2013
Firstpage :
2131
Lastpage :
2135
Abstract :
In this paper we propose a stacked multi-junction solar cell design that allows the intimate contact of the individual cells while maintaining low resistive losses. The cell design is presented using an InGaP and GaAs multi-junction cell as an illustrative example. However, the methodologies presented in this paper can be applied to other III-V cell types including InGaAs and InGaAsP cells. The main benefits of the design come from making small cells, on the order of 2×10-3 cm2. Simulations showed that series resistances should be kept to less than 5 Ω for devices up to 400 μm in diameter to keep resistance power losses to less than 1%. Low resistance AuBe/Ni/Au ohmic contacts to n-type InGaP are also demonstrated with contact resistivity of 5×10-6 Ωcm-2 when annealed at 420°C.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; solar cells; InGaAs; InGaP; contact resistivity; resistance considerations; resistance power losses; series resistances; stacked small multijunction photovoltaic cells; Apertures; Conductivity; Gallium arsenide; Gold; Junctions; Photovoltaic cells; Resistance; III-V solar cells; compound semiconductors; multi-junction solar cells; photovoltaic cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744895
Filename :
6744895
Link To Document :
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