Numerical study of In0.15Ga0.85N/GaN MQW solar cells with varying well band structure

The photovoltaic properties of 14 pairs In₀₁₅Ga_0.85N/GaN multiple quantum well solar cells with varying indium composition of QW are investigated numerically. The simulation results show that smooth well structure of energy band can be reduce carrier confinement and the recombination to enhance photo-current generation. This helpful design is easy to improve carrier transport to collection. And the optimal In₀₁₅Ga_0.85N/GaN MQW solar cell had V_oc of 2.37V, J_sc of 0.73, and the efficiency of 0.79%, which the efficiencies is enhanced 69.2 % to reference cell.