DocumentCode
683168
Title
Commercial size multicrytalline silicon solar cell with ion implant emitter
Author
Ebong, Abasifreke ; Yizhe Wang ; Guangyao Jin ; Zhou, Tingzhi
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of North Carolina, Charlotte, NC, USA
fYear
2013
fDate
16-21 June 2013
Firstpage
2191
Lastpage
2194
Abstract
This paper reports on the preliminary results of the first manufacturable ion implanted multicrystalline silicon solar cells with mean efficiency of 16.60%. The best efficiency of 16.83% is demonstrated, which is the highest reported ion implanted 243.4 cm2 multicrystalline silicon solar cell with Al back surface field. A dose of 2.8E15 atom.cm2 at 15-keV was used and annealed at implant anneal similar to the mono crystalline solar cell counterparts. The open circuit voltage of ~621 mV and the measured internal quantum efficiency (IQE) were similar to multicrystalline cells using POCl3 emitter. This results is very promising and confirms that the bulk lifetime does not degrade during the implant anneal.
Keywords
aluminium; ion implantation; oxygen compounds; phosphorus compounds; solar cells; Al; Al back surface field; IQE; POCl3 emitter; POCl3; bulk lifetime; efficiency 16.60 percent; efficiency 16.83 percent; electron volt energy 15 keV; implant anneal; internal quantum efficiency; ion implanted multicrystalline silicon solar cells; Annealing; Implants; Ion implantation; Photovoltaic cells; Resistance; Silicon; Throughput; Al BSF; Multicrystalline cell; ion implant; ion implanted multicrystalline; screen-printed solar cells;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC.2013.6744910
Filename
6744910
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