DocumentCode :
683180
Title :
Texturization control for fabrication of high efficiency mono crystalline si solar cell
Author :
Nakamura, Kentaro ; Aoki, Masaki ; Sumita, I. ; Sato, Hikaru ; Kumagai, Y. ; Kawata, Yoshimasa ; Ohshita, Yoshio
Author_Institution :
Meiji Univ., Kawasaki, Japan
fYear :
2013
fDate :
16-21 June 2013
Firstpage :
2239
Lastpage :
2242
Abstract :
We studied the texturization mechanism of mono crystalline silicon wafer using some alternative additives. We successfully controlled the texture size with change of concentration of KOH in the etchant. We also proposed one appropriate model of role of additives in texturization process. In our proposed mechanism, the additives should play a role as micro-mask when the micro pyramid is formed and the texturization process should be dominated by the correlation of etching rate and adhesion and desorption rate of additives. We also fabricated solar cells with several texture sizes and evaluated them. The decrease of F.F. with the decrease of texture size was mainly caused by the increase of Rs and this result suggested that we had to optimize the screen printing and firing conditions for the small texture. In addition, there are thick damaged layer on the top and bottom of texture, and these damaged layer cause the deterioration of cell efficiency with texture miniaturization. Reduction of the damage is important to realize high efficiency solar cell using miniaturized texture.
Keywords :
adhesion; desorption; elemental semiconductors; etching; silicon; solar cells; thick films; KOH; Si; adhesion; cell efficiency; desorption rate; etching rate; high efficiency mono crystalline silicon solar cell; screen printing; texture miniaturization; texturization control; Additives; Etching; MONOS devices; Photovoltaic cells; Silicon; Surface texture; alkaline etching; mono cryatalline; silicon; texture;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744922
Filename :
6744922
Link To Document :
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