Evaluation and investigation of laser doping by a double-Gaussian shaped beam profile

In this work we report for the first time on the investigation of laser doping by a double-gaussian beam profile. The formation of highly doped n⁺⁺ regions was analyzed by comparing two different beam profiles, a focused gaussian and the double-gauss shaped beam. Sheet resistances and emitter profile analysis have been performed by four-point-probe and Electrochemical capacitance voltage measurements. Laser induced damages on the silicon surface have been investigated using Transmission Electron Microscopy and QSSPC tool. Finally by optimizing the phosphorus source an absolute efficiency gain of up to 0.6% was achieved for multicrystalline silicon solar cells.