Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell

Author

Lung-Hsing Hsu ; Chien-Chung Lin ; Ming-Hsuan Tan ; Yun-Ling Yeh ; Da-Wei Lin ; Hau-Vei Han ; Hao-Chung Kuo

Author_Institution

Inst. of Lighting & Energy Photonics, Nat. Chiao-Tung Univ., Tainan, Taiwan

fYear

2013

fDate

16-21 June 2013

Firstpage

2428

Lastpage

2431

Abstract

The novel design of embedded InN dot-like structure within InGaN was useful as an absorption layer in photovoltaic (PV) cells. We constructed the simulation model by employing the commercial software APSYS® and integrating the absorption coefficient of thin InN materials fabricated by metal organic vapor deposition (MOCVD). The model of simulating gradient Indium content of InGaN used as transition interface between InN and GaN was investigated. The results exhibit utilizing the effective variation of Indium content and suitable thickness to approach the optimal characteristic of hybrid InN/InGaN structure within solar cells shall be anticipated to enhance the performance of current nitride-based solar cells.

Keywords

MOCVD; indium compounds; solar cells; APSYS®; InGaN; absorption coefficient; absorption layer; dot-like structure; embedded InN; gradient-indium content; metal organic vapor deposition; nitride-based solar cell; photovoltaic cells; Absorption; Gallium nitride; Light emitting diodes; MOCVD; Materials; Metals; Photovoltaic cells; APSYS^®; InN materials; gradient Indium content; photovoltaic cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744965

Filename

6744965