Growth of vertical silicon nanowires array using electrochemical alternative

Silicon nanowires have been grown on Si (111) substrate using the vapor-liquid-solid (VLS) via anodic aluminum oxide (AAO) fabrication and gold plating deposition. The pore diameters of AAO are expected to be closely related with the size of gold catalyst as well as the diameter of the subsequently grown silicon nanowires. The nanochannel diameter of AAO template was controlled by modifying the applied potential in different values. Filling the small amount of Au at the bottom of AAO template was realized by electrochemically plating technique. The sub-20 nm diameter gold nanowires were formed thanks to long plating duration. The growth of vertical silicon nanowires by VLS techniques was carried out in different growth time using disilane as a source gas.