Title :
Isolation and characterization of large-area GaSb membranes grown on GaAs substrates
Author :
Renteria, Emma J. ; Ahirwar, Pankaj ; Clark, Stephen P. R. ; Romero, Orlando S. ; Addamane, Sadhvikas ; Hains, Chris P. ; Rotter, Tom J. ; Dawson, L.R. ; Lavrova, Olga ; Lester, L.F. ; Balakrishnan, Ganesh
Author_Institution :
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA
Abstract :
We investigate substrate removal techniques for GaSb epilayers grown on GaAs substrates. The GaSb epilayers are grown metamorphically on the GaAs substrate by inducing large areas of 90° interfacial misfit dislocation arrays at the GaSb/GaAs interface. Three structures have been investigated, each with a different etch stop process such that the GaAs substrate is removed without affecting the GaSb epi-layer. The GaSb membranes upon isolation are characterized for crystal quality using x-ray diffraction and for surface quality using atomic force microscopy.
Keywords :
III-V semiconductors; X-ray diffraction; atomic force microscopy; dislocation arrays; etching; gallium compounds; membranes; semiconductor epitaxial layers; semiconductor growth; AFM; GaAs; GaAs substrates; GaSb; GaSb epilayers; GaSb-GaAs interface; X-ray diffraction; XRD; atomic force microscopy; crystal quality; etch stop process; interfacial misfit dislocation arrays; large-area GaSb membrane characterization; large-area GaSb membrane isolation; substrate removal techniques; surface quality; Epitaxial growth; Gallium arsenide; Rough surfaces; Substrates; Surface morphology; Surface roughness; Surface treatment; III-V semiconductor materials; semiconductor epitaxial layers; semiconductor growth;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744973
