DocumentCode
68325
Title
Supercharging Silicon Solar Cell Performance by Means of Multijunction Concept
Author
Almansouri, Ibraheem ; Ho-Baillie, Anita ; Bremner, Stephen P. ; Green, Martin A.
Author_Institution
Australian Centre for Adv. Photovoltaics, Univ. of New South Wales, Sydney, NSW, Australia
Volume
5
Issue
3
fYear
2015
fDate
May-15
Firstpage
968
Lastpage
976
Abstract
This study aims to comprehensively calculate the conversion efficiency limits of multijunction solar cells having crystalline silicon (c-Si) not only as a growth substrate but as the lowermost active subcell as well. The first set of efficiency limits is calculated based on the detailed balance principle, assuming a stepwise absorption profile. Practical limits are then calculated using Si absorption data and Auger recombination parameters from the literature. The Si wafer thickness is also considered in the two-stack tandem design. Performances of the tandems are compared when various Si solar cell technologies are used as the bottom subcells. The impact of external radiative efficiency and external quantum efficiency of the top subcell on the tandem performance is studied. Efficiency limits using state-of-the-art devices, and the effect of varying cell thickness on tandem efficiencies is also reported.
Keywords
Auger effect; electron-hole recombination; elemental semiconductors; p-n junctions; silicon; solar cells; Auger recombination parameters; Si; balance principle; cell thickness; conversion efficiency limits; external quantum efficiency; external radiative efficiency; lowermost active subcell; multijunction concept; silicon solar cell performance; state-of-the-art devices; stepwise absorption profile; supercharging; tandem performance; two-stack tandem design; wafer thickness; Junctions; Photonic band gap; Photonics; Photovoltaic cells; Silicon; Substrates; Sun; Efficiency limit; multijunction solar cells; photovoltaics; silicon-based solar cell; tandem solar cells; thin-film solar cells;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2015.2395140
Filename
7042762
Link To Document