Electrical properties of Cu2ZnSnS4 single crystal

Cu₂ZnSnS₄ (CZTS) has attracting considerable interest because first principle calculation predict that its electronic properties must be similar to chalcopyrite Cu(In, Ga)Se₂ (CIGS). However, the fundamental studies of CZTS, which are single crystal growth and electrical property, are little known. Here, we report on CZTS single crystal growth from solution and electrical properties. Optimum growth condition of CZTS was determined based on CZTS-Sn phase diagram, which was growth temperature 900 C and X= 70 mol% solution. It is shown that the conduction mechanism have two-path system (defects and band transports), which were characterized by M-VRH for the defect path and typical thermal activation conduction for band path.