Title :
Electrical properties of Cu2ZnSnS4 single crystal
Author :
Nagaoka, A. ; Yoshino, Kohzoh ; Miyake, Hirokazu ; Taniyama, Tomoyasu ; Kakimoto, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Miyazaki, Miyazaki, Japan
Abstract :
Cu2ZnSnS4 (CZTS) has attracting considerable interest because first principle calculation predict that its electronic properties must be similar to chalcopyrite Cu(In, Ga)Se2 (CIGS). However, the fundamental studies of CZTS, which are single crystal growth and electrical property, are little known. Here, we report on CZTS single crystal growth from solution and electrical properties. Optimum growth condition of CZTS was determined based on CZTS-Sn phase diagram, which was growth temperature 900 C and X= 70 mol% solution. It is shown that the conduction mechanism have two-path system (defects and band transports), which were characterized by M-VRH for the defect path and typical thermal activation conduction for band path.
Keywords :
Hall effect; ab initio calculations; copper compounds; crystal growth from solution; ternary semiconductors; tin compounds; zinc compounds; CZTS-Sn phase diagram; Cu2ZnSnS4; Cu2ZnSnS4 single crystal; M-VRH; band path; conduction mechanism; defect path; electrical property; electronic properties; first principle calculation; optimum growth condition; single crystal growth; temperature 900 degC; two-path system; typical thermal activation conduction; Conductivity; Crystals; Liquids; Photovoltaic cells; Solvents; Tin; Cu2ZnSnS4 (CZTS); Hall measurement; Single crystal;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6745011
