Atomic-scale origin of emission from extended defects in mc-Si

Defect luminescence in mc-Si has been extensively studied in the decades since it was first identified. The origin has been probed by the techniques of photoluminescence, cathodoluminescence, and by theoretical investigations. Due to detection limits and resolution inadequacies of these techniques a definitive explanation of defect luminescence phenomena has not yet been provided to the silicon PV community. This work combines the traditionally used techniques with a suite of atomic-scale characterization methods to probe the origins of defect luminescence in mc-Si PV material at the atomic level. High resolution transmission electron microscopy and laser-pulsed atom probe tomography provide the structural and chemical information necessary to provide definitive evidence of the origin of defect luminescence in mc-Si.