An improved mathematical modeling to simulate metallization screen pattern trend for silicon solar cell

The series resistance calculation based on H-type model has been widely used to understand power loss mechanism in semiconductor solar cell, and one of its popular applications is to predict optimal metallization screen printing pattern. The disadvantage of this model is that it is not accurate to estimate the relationship of screen pattern trend vs. cell efficiency, since it is based on an ideal rectangular finger shape, which does not exist in present regular screen printing process. In this work, a revised model is proposed to simulate the contact resistant power loss in multi-crystalline silicon solar cell. Improved accuracy of the new model is found by comparing the simulation results to the I-V testing data of multi-crystalline silicon solar cell printed with Heraeus 96XX front Ag paste.