Nucleation-step study of silicon homoepitaxy for low-temperature fabrication of Si solar cells

Author

Mosleh, Aboozar ; Ghetmiri, Seyed Amir ; Conley, Benjamin R. ; Abu-Safe, Husam ; Waqar, Zafar ; Benamara, M. ; Shui-Qing Yu ; Naseem, Hameed A.

Author_Institution

Microelectron.-Photonics Program, Univ. of Arkansas, Fayetteville, AR, USA

fYear

2013

fDate

16-21 June 2013

Firstpage

2646

Lastpage

2650

Abstract

Smooth nucleation of silicon has been achieved as a critical step in epitaxial growth process using ultra high vacuum chemical vapor deposition system at 250°C. Proper conditions were achieved by studying the effect of key nucleation parameters such as plasma power, hydrogen dilution and deposition temperature. High-resolution transmission electron microscopy has been employed to study rough nucleation condition in order to achieve perfect nucleation step, which resulted in high quality epilayers.

Keywords

chemical vapour deposition; elemental semiconductors; epitaxial growth; epitaxial layers; hydrogen; nucleation; silicon; solar cells; transmission electron microscopy; Si; deposition temperature; epitaxial growth; hydrogen dilution; low-temperature fabrication; rough nucleation; solar cells; temperature 250 degC; transmission electron microscopy; ultra high vacuum chemical vapor deposition; Plasma temperature; Rough surfaces; Silicon; Surface cleaning; Surface contamination; Surface roughness; crystalline materials; epitaxial layers; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6745017

Filename

6745017