Title :
Characterization of high fluence irradiations on advanced triple junction solar cells
Author :
Maximenko, S.I. ; Messenger, Scott R. ; Hoheisel, Raymond ; Scheiman, David ; Gonzalez, M. ; Lorentzen, J. ; Jenkins, Phillip P. ; Walters, R.J.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Reported is the characterization of irradiated InGaP2/GaAs/Ge multijunction (MJ) solar cells using the cathodoluminescence (CL) imaging/spectroscopy and electron beam induced current (EBIC) modes of scanning electron microscopy (SEM). These techniques were applied to verify the influence of radiation damage on the optoelectronic properties of each subcell in the monolithic triple junction structure and correlate them with the illuminated (AM0, 1 sun, 25°C) current-voltage (IV) and quantum efficiency (QE) characteristics.
Keywords :
III-V semiconductors; cathodoluminescence; gallium arsenide; germanium; indium compounds; radiation effects; scanning electron microscopy; semiconductor junctions; solar cells; EBIC; InGaP2-GaAs-Ge; SEM; advanced triple junction solar cells; cathodoluminescence imaging; cathodoluminescence spectroscopy; electron beam induced current modes; high fluence irradiations; monolithic triple junction structure; quantum efficiency; radiation damage; scanning electron microscopy; Degradation; Gallium arsenide; Indium gallium arsenide; Junctions; Photovoltaic cells; Radiation effects; Scanning electron microscopy; Multijunction solar cells; SEM; diffusion length; irradiation damage;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6745053
