DocumentCode
683319
Title
Recent progress of High-Efficiency III-V multijunction Solar Cells
Author
Lijie Sun ; Mengyan Zhang ; Xin Fang ; Kaijian Chen ; Wei Zhang ; Mengjiong Chen ; Jianfeng Lu
Author_Institution
Center for Photovoltaic Eng., Shanghai Solar Energy Res. Center, Shanghai, China
fYear
2013
fDate
16-21 June 2013
Firstpage
2832
Lastpage
2834
Abstract
High-Efficiency III-V multijunction Solar Cells are being developed at Shanghai Solar Energy Research Center (SSRC) for use in space applications. Recently, Inverted Metamorphic (IMM) 3-Junction cells achieved a 1-sun, AM0 conversion efficiency of 31.88% with an open-circuit-voltage of 2.978V, a short-circuit current-density of 16.94 mA/cm2, and a fill factor of 0.863. In addition, GaInP/GaAs/InGaAsP/InGaAs 4-junction solar cells have been prepared by direct wafer bonding (DWB) technique after the epitaxial growth of GaInP/GaAs heterojunction on GaAs substrate and InGaAsP/InGaAs heterojunction on InP substrate, respectively. Moreover, antireflection coating (ARC) has been studied over the range of 300 nm to 1700 nm for 4J solar cells in order to reduce the front surface reflectivity. The latest status of the semiconductor-bonded 4J solar cells and the antireflection coating will also be discussed.
Keywords
III-V semiconductors; antireflection coatings; epitaxial growth; short-circuit currents; solar cells; wafer bonding; 4-junction solar cells; AM0 conversion efficiency; GaInP-GaAs-InGaAsP-InGaAs; Shanghai solar energy research center; antireflection coating; direct wafer bonding technique; epitaxial growth; front surface reflectivity; high-efficiency III-V multijunction solar cells; inverted metamorphic 3-junction cells; open-circuit-voltage; semiconductor-bonded 4J solar cells; short-circuit current-density; voltage 2978 V; Bonding; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Photovoltaic cells; Substrates; Wafer bonding; III-V semiconductor materials; Indium gallium arsenide; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC.2013.6745061
Filename
6745061
Link To Document