• DocumentCode
    683378
  • Title

    High fluence irradiations on triple junction solar cells

  • Author

    Messenger, Scott R. ; Hoheisel, Raymond ; Lorentzen, J. ; Scheiman, David ; Warner, Jeffrey H. ; Gonzalez, M. ; Jenkins, Phillip P.

  • Author_Institution
    U.S. Naval Res. Lab., Washington, DC, USA
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Firstpage
    3121
  • Lastpage
    3127
  • Abstract
    Triple junction GaInP/InGaAs/Ge solar cells were irradiated with 3 MeV protons to extreme fluences as high as 1015 p+/cm2. In this paper, IV and QE results will be presented and a model will be developed to explain the radiation behavior. A carrier removal damage mechanism is evident which actually aids in the radiation hardness of these devices.
  • Keywords
    III-V semiconductors; gallium arsenide; germanium; indium compounds; solar cells; wide band gap semiconductors; GaInP-InGaAs-Ge; carrier removal damage mechanism; electron volt energy 3 MeV; high fluence irradiations; radiation behavior; radiation hardness; triple junction solar cells; Current measurement; Degradation; Indium phosphide; Junctions; Photovoltaic cells; Protons; Radiation effects; displacement damage dose; multijunction solar cells; radiation effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.2013.6745120
  • Filename
    6745120
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=683378