Numerical simulation about effects of bandgap grading in Cu(In, Ga)Se2 with a bandgap of 1.4 eV on solar cell performance

Author

Hirai, Yuki ; Suzuki, Ryo ; Kurokawa, Yusuke ; Yamada, Akimasa

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2013

fDate

16-21 June 2013

Firstpage

3307

Lastpage

3309

Abstract

The effects of bandgap grading in a Cu(In, Ga)Se₂ thin film with the average bandgap of 1.4 eV on the performance of the solar cells were investigated by changing a minimum bandgap and its position employing wxAMPS. Considering minority carrier recombination at the CdS/CIGS interface, degradations of solar cell characteristics were observed. In this case, double graded band profile is required in order to suppress the recombination. However, considering also an ordered vacancy compound (OVC) at the interface, a high efficiency that is close to the case without interface recombination was obtained. These results indicate that the field effect passivation owing to OVC can suppress the interface recombination.

Keywords

copper; energy gap; gallium; indium; minority carriers; numerical analysis; solar cells; Cu(Ga)Se₂; Cu(In)Se₂; OVC; bandgap grading; double graded band profile; electron volt energy 1.4 eV; field effect passivation; interface recombination suppression; minority carrier recombination; numerical simulation; ordered vacancy compound; solar cell performance; wxAMPS; Degradation; Electric fields; Numerical models; Passivation; Photonic band gap; Photovoltaic cells; Radiative recombination; Bandgap grading; CIGS; compound semiconductor; photovoltaic cells; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6745158

Filename

6745158