• DocumentCode
    683642
  • Title

    Reliability study on through mold via (TMV) for 3D microelectronic packaging under thermal and moisture loadings

  • Author

    Zhaohui Chen ; Ser Choong Chong ; Boyu Zheng ; Boo Yang Jung ; Tai Chong Chai ; Xiaowu Zhang

  • Author_Institution
    Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
  • fYear
    2013
  • fDate
    11-13 Dec. 2013
  • Firstpage
    524
  • Lastpage
    529
  • Abstract
    Through mold via (TMV) provides a potential solution for the 3D microelectronic packaging. The reliability of the TMV is one of the major concerns during its applications. In this paper, the reliability of the TMV structure used for the embedded wafer level packaging (eWLP) was studied by the finite element simulation under the moisture 85°C/85RH, reflow and thermal cycling loading conditions. Fracture mechanics was used to calculate the strain energy release rate of the delamination between the plating copper and molding compound. The effects of the material properties and structure parameters were examined by the simulation results. The efforts can provide some guidelines for the reliability design of the 3D microelectronic packaging with TMVs.
  • Keywords
    delamination; finite element analysis; fracture mechanics; integrated circuit reliability; moisture; reflow soldering; three-dimensional integrated circuits; wafer level packaging; 3D microelectronic packaging; TMV reliability; TMV structure; delamination; eWLP; embedded wafer level packaging; finite element simulation; fracture mechanics; material properties; molding compound; plating copper; reflow; strain energy release rate; structure parameters; thermal cycling loading conditions; through mold via; Compounds; Copper; Delamination; Loading; Moisture; Strain; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference (EPTC 2013), 2013 IEEE 15th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-2832-3
  • Type

    conf

  • DOI
    10.1109/EPTC.2013.6745775
  • Filename
    6745775