DocumentCode
683854
Title
Impact mechanism and regularity of trace H2 O on SF6 decomposition characteristic under PD
Author
Cunchao Wang ; Ju Tang ; Fuping Zeng ; Xiaoxing Zhang ; Qiang Yao
Author_Institution
Electr. Power Res. Inst., Jiangsu Power Co., Nanjing, China
fYear
2013
fDate
20-23 Oct. 2013
Firstpage
1161
Lastpage
1164
Abstract
H2O is one of the most important factors that affect the final SF6 decomposition products, the products concentration, and the production rate, and so on, under partial discharge (PD). However, the mechanism and regular pattern of SF6 decomposition haven´t been figured out completely. This paper had made several experiments, as long as 48h, research SF6 PD decomposition in different H2O contents, all experiments utilize the test platform of SF6 PD decomposition, and then detect the concentration of SF6 decomposition products in different H2O contents. It had obtained the regular pattern of the effects of H2O on SF6 PD decomposition. The results indicate: increasing H2O contents can restrain the generation of CF4, and the generation of CO2 is more than CF4. Moreover, H2O will firstly promote the generation of both SO2F2 and SOF2, and then inhibit them as time goes on. Discriminatively, the promotion and inhibition leaded by H2O of SOF2 are stronger than that of SO2F2. Therefore, when diagnoses facilities faults through using the SF6 decomposition products, the effect of H2O should be taken into account.
Keywords
decomposition; insulating materials; partial discharges; CF4; SF6; SO2F2; decomposition products; impact mechanism; partial discharge; Partial discharges; Production; Sulfur hexafluoride; Voltage measurement; Water;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation and Dielectric Phenomena (CEIDP), 2013 IEEE Conference on
Conference_Location
Shenzhen
Type
conf
DOI
10.1109/CEIDP.2013.6747091
Filename
6747091
Link To Document