Effect of doped Co2O3 on Dielectric Properties of ZnO Varistor

Author

Chuntian Chen ; Yulong Qiao ; Dongsheng Wang ; Qichao Shi ; Haifeng Yang ; Ximing Wang

Author_Institution

Harbin Univ. of Sci. & Technol., Harbin, China

fYear

2013

fDate

20-23 Oct. 2013

Firstpage

730

Lastpage

732

Abstract

This paper researches the effect of doped Co₂O₃ on the dielectric properties of ZnO varistor. With the increasing mol percentage of Co₂O₃, the conductivity of ZnO grain reducing, the turning point of the voltage drops to a lower position of the current density. According to the analysis of capacitance and voltage, the decrease of grain conductivity can attribute to the carrier concentration decrease which is caused by the reduction of interstitial Zn_i or concentration of oxygen vacancy V₀. The doped Co₂O₃ will also reduce the dielectric loss of nonlinear resistance. The varistor may apply to metal oxide arrester.

Keywords

II-VI semiconductors; arresters; capacitance; carrier density; cobalt compounds; current density; dielectric losses; electrical conductivity; interstitials; vacancies (crystal); varistors; wide band gap semiconductors; zinc compounds; ZnO:Co₂O₃; capacitance; carrier concentration; current density; dielectric loss; dielectric properties; electric conductivity; grain conductivity; interstitial; metal oxide arrester; nonlinear resistance; oxygen vacancy; varistor; Arresters; Conductivity; Dielectric losses; Resistance; Varistors; Zinc oxide; Doped; dielectric loss; electric conductivity; metal oxide arrester;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulation and Dielectric Phenomena (CEIDP), 2013 IEEE Conference on

Conference_Location

Shenzhen

Type

conf

DOI

10.1109/CEIDP.2013.6747440

Filename

6747440