A new method of dielectric characterization in the microwave range for high-k ferroelectric thin films

In this paper we propose a new method of dielectric characterization of high-k thin films based on the measurement of coplanar capacitor inserts between two coplanar waveguide transmission lines. The measurement geometry is deposed on the thin film which is elaborate on an insulating substrate. The thin film permittivity is extracted with the help of a mathematical model describing the capacitance between two conductor plates deposed on a 2-layers substrate. A simple correction is proposed in order to enhance the matching between the model and the full wave simulation. The results of the proposed measurement method are compared to those of a classical characterization technique using parallel plate capacitor geometry.