Title :
Preparation of CuInSe2 thin films by post-deposition selenization of sputter deposited Cu-In-O multiple phase thin films
Author :
Yassitepe, Emre ; Shafarman, William ; Shah, Shalin
Author_Institution :
Mater. Sci. & Eng., Univ. of Delaware, Newark, DE, USA
Abstract :
Selenization of sputter deposited Cu-In-O films is investigated using two different sputtering targets. Sputter deposition parameters are varied to study the phase formation from Cu2In2O5 and Cu+In2O3 sputtering targets. XRD patterns of sputter deposited thin films from these targets showed different crystal orientation of the In2O3 phases deposited at 300°C and 500°C substrate temperatures. Films prepared by sputtering from Cu2In2O5 target are annealed under H2Se-Ar gas and the films prepared from Cu+In2O3 sputtering are annealed with Se under Ar-H2 gas. XRD results showed that the CuInSe2 phase is formed in all samples and a residual impurity phase In2O3 is identified for some of the films. Additionally, the results suggested that the selenization of Cu-In-O thin film revealed different effects when In2O3 phase is oriented. Additional layers are deposited for solar cell device and the device performances are investigated.
Keywords :
X-ray diffraction; annealing; copper compounds; crystal orientation; impurities; indium compounds; semiconductor growth; semiconductor thin films; sputter deposition; ternary semiconductors; Cu-In-O; CuInSe2; XRD patterns; XRD results; annealing; crystal orientation; phase formation; residual impurity phase; selenization; solar cell device performance; sputter deposited multiple phase thin films; sputter deposition parameters; sputtering targets; substrate temperatures; temperature 500 degC; Films; Glass; Performance evaluation; Photovoltaic cells; Sputtering; Substrates; X-ray scattering; Cu-In-O Thin Films; CuInSe2; Selenization;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), Volume 2, 2012 IEEE 38th
Conference_Location :
Austin, TX
DOI :
10.1109/PVSC-Vol2.2012.6750497
