DocumentCode
684991
Title
Laminated structure of organic thin-film transistors preparation and gas sensing characteristics
Author
Jing-yi Xu ; Dong-xing Wang ; Wei Liu ; Lei Wang ; Bin An ; Jing-hua Yin ; Hong Zhao
Author_Institution
Key Lab. of Eng. Dielectr. & Its Applic., Harbin Univ. of Sci. & Technol., Harbin, China
Volume
01
fYear
2013
fDate
16-18 Aug. 2013
Firstpage
202
Lastpage
205
Abstract
Using the vacuum deposition method and the organic semiconductor copper phthalocyanine make of the structure of Au (Emitte)/CuPc/Al (Base)/CuPc/Au (Collector) the five-layer laminate structure organic transistor sensor. Specially appointed gases such as O2, NO2 will occur oxidation-reduction reduction when they were absorbed by the emitting region´s organic thin film of organic transistor sensors, which equals to the doping effect of donor or acceptor, caused the change of carrier in organic film. To increase or decrease the carrier emitted by the source, the tunneling CuPc/Al/ CuPc double Schottky Barrier[10] gate region is formed operating current and changed. According to measuring the current change of organic transistor sensor to determined a specific gas.
Keywords
Schottky barriers; aluminium; copper compounds; gas sensors; gold; laminations; organic field effect transistors; organic semiconductors; thin film sensors; thin film transistors; vacuum deposition; doping effect; five-layer laminate structure organic transistor sensor; gas sensing characteristics; organic semiconductor copper phthalocyanine; organic thin-film transistor preparation; oxidation-reduction; region organic thin film; tunneling double Schottky barrier gate region; vacuum deposition method; Films; Gold; Logic gates; Polymers; Semiconductor device measurement; Transistors; an organic thin film transistor; an organic transistor sensor; copper phthalocyanine; organic tunneling transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Measurement, Information and Control (ICMIC), 2013 International Conference on
Conference_Location
Harbin
Print_ISBN
978-1-4799-1390-9
Type
conf
DOI
10.1109/MIC.2013.6757947
Filename
6757947
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