DocumentCode :
68505
Title :
A Novel Silicon-on-Insulator Lateral Insulated-Gate Bipolar Transistor With Dual Trenches for Three-Phase Single Chip Inverter ICs
Author :
Weifeng Sun ; Jing Zhu ; Long Zhang ; Hui Yu ; Yicheng Du ; Keqin Huang ; Shengli Lu ; Longxing Shi ; Yangbo Yi
Author_Institution :
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Volume :
36
Issue :
7
fYear :
2015
fDate :
Jul-15
Firstpage :
693
Lastpage :
695
Abstract :
A silicon-on-insulator lateral insulated gate bipolar transistor with dual trenches located under the high voltage interconnection (HVI), which can be used in 500 V three-phase single chip inverter ICs, is proposed in this letter for the first time. Using the dual trenches to sustain the electric potential from the collector region, the electric field crowding induced by HVI at the silicon surface can be alleviated. The influence of HVI can be shielded completely by adjusting the position and spacing of the trenches. The experimental results show that the breakdown voltage of the proposed structure is 550 V and its latch-up voltage (VLP) at gate-emitter voltage of 15 V (VGE = 15 V) is higher than 500 V. The current density (JC) is 129 A/cm2 when VGE = 5 V and collector-emitter voltage (VCE) is 3 V. The turn OFF time (tOFF) is 132 ns at turn OFF current density of 84 A/cm2.
Keywords :
bipolar transistors; current density; electric breakdown; electric fields; integrated circuit interconnections; invertors; isolation technology; power transistors; silicon-on-insulator; HVI; breakdown voltage; collector region; collector-emitter voltage; current density; dual trenches; electric field; electric potential; gate-emitter voltage; high voltage interconnection; latch-up voltage; lateral insulated-gate bipolar transistor; silicon surface; silicon-on-insulator; three-phase single chip inverter IC; time 1.32 ns; voltage 15 V; voltage 5 V; voltage 500 V; voltage 550 V; Electric breakdown; Electric fields; Electric potential; Insulated gate bipolar transistors; Inverters; Logic gates; Silicon-on-insulator; High Voltage Interconnection (HVI),; High voltage interconnection (HVI); breakdown voltage (BV); silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT),; silicon-oninsulator lateral insulated gate bipolar transistor (SOI-LIGBT); three-phase single chip inverter ICs;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2434611
Filename :
7109853
Link To Document :
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