A comparative study of radio frequency stability performance of Double Gate MOSFET and Double Gate Tunnel FET

Author

Sivasankaran, K. ; Mallick, P.S.

Author_Institution

Sch. of Electr. Eng., VIT Univ., Vellore, India

fYear

2013

fDate

12-14 Dec. 2013

Firstpage

220

Lastpage

224

Abstract

This paper presents comparative study on radio frequency (RF) stability performance of Double Gate MOSFET (DG-MOSFET) and Double Gate Tunnel FET (DG-TFET). A non-quasi static small signal model is used to extract small signal parameters which are then verified with extracted parameters through simulation. The high frequency performance of DG-MOSFET and DG-TFET is evaluated by extracting RF Figure of Merit (FoM) such as cut-off frequency (f_t), maximum oscillation frequency (f_max) along with stability factor. The result shows that DG-TFET has better cut-off frequency and stability performance as compared to DG-MOSFET.

Keywords

MOSFET; tunnel transistors; DG-MOSFET; DG-TFET; FoM; RF stability performance; cut-off frequency; double gate MOSFET; double gate tunnel FET; figure of merit; maximum oscillation frequency; nonquasistatic small signal model; radio frequency stability performance; stability factor; Circuit stability; Cutoff frequency; Logic gates; MOSFET; Performance evaluation; Radio frequency; Stability analysis; Double Gate MOSFET; Double Gate Tunnel FET; Radio Frequency; Small-signal model; Stability Factor;

fLanguage

English

Publisher

ieee

Conference_Titel

Green Computing, Communication and Conservation of Energy (ICGCE), 2013 International Conference on

Conference_Location

Chennai

Type

conf

DOI

10.1109/ICGCE.2013.6823432

Filename

6823432