A surface potential model of junctionless surrounding gate(JLSG) MOSFET

In this paper, a new surface potential model for junctionless surrounding gate MOSFET is developed. Junctionless MOSFET is a device that has similar structure like conventional MOSFET, with a homogeneous doping polarity and a uniform doping concentration across the channel, source and drain. Junctionless device is more advantageous than junction device in the way of diminishing the effect of short channel behaviour. It is a very simple device to design as it eliminates junction implantation and annealing. In this paper, surface potential is developed and it is analyzed for various parameters like oxide thickness, Drain bias and compared with the result of junction based surrounding gate MOSFET.