A surface potential model of junctionless surrounding gate(JLSG) MOSFET

Author

Dhanaselvam, P. Suveetha ; Balamurugan, N.B. ; Ananthi, A. Nithya

Author_Institution

Dept. of ECE, VCET, Madurai, India

fYear

2013

fDate

12-14 Dec. 2013

Firstpage

237

Lastpage

239

Abstract

In this paper, a new surface potential model for junctionless surrounding gate MOSFET is developed. Junctionless MOSFET is a device that has similar structure like conventional MOSFET, with a homogeneous doping polarity and a uniform doping concentration across the channel, source and drain. Junctionless device is more advantageous than junction device in the way of diminishing the effect of short channel behaviour. It is a very simple device to design as it eliminates junction implantation and annealing. In this paper, surface potential is developed and it is analyzed for various parameters like oxide thickness, Drain bias and compared with the result of junction based surrounding gate MOSFET.

Keywords

MOSFET; semiconductor doping; JLSG MOSFET; annealing; homogeneous doping polarity; junction implantation elimination; junctionless surrounding gate MOSFET; oxide thickness; surface potential model; uniform doping concentration; Decision support systems; Junctionless MOSFET; Short channel effects; Surface Potential; Surrounding gate MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Green Computing, Communication and Conservation of Energy (ICGCE), 2013 International Conference on

Conference_Location

Chennai

Type

conf

DOI

10.1109/ICGCE.2013.6823435

Filename

6823435