Design of POF optoelectronic integrated transmitter and receiver

The design of optoelectronic integrated transmitter and receiver for plastic optical fiber(POF) communication applications realized in 0.5μm BCD (Biplor, CMOS and DMOS) process is presented in the report. The hybrid on-chip integrated transmitter includes a driver with temperature compensation of modulation current and a bonded 650nm resonant cavity light emitting diode (RCLED). In the monolithic optoelectronic integrated receiver, large area multi-finger PIN photodetector(PD) that is compatible with standard IC process, transimpedance amplifier and post amplifier are presented. Equivalent circuit Spice models of optoelectronic devices (RCLED and PD) are built for more perfect co-design of optoelectronic integrated circuits (OEIC). The simulation results show that the transmitter operates at 250Mbps with modulation current of 33mA, providing the maximal optical power of - 1.5dBm. In receiver, the gain of 86 dB and -3dB bandwidth of 370MHz are achieved. These indicate that optoelectronic integrated chips can be employed in 100 Mbps high-speed POF-based Fast Ethernet systems for broadband access network applications.