Characterization of new FBK double-sided 3D sensors with improved breakdown voltage

Author

Dalla Betta, Gian-Franco ; Boscardin, Maurizio ; Giacomini, G. ; Hoeferkamp, Martin ; Mattedi, F. ; Mattiazzo, S. ; McDuff, Haley ; Mendicino, Roberto ; Povoli, M. ; Seidel, S. ; Zorzi, Nicola

Author_Institution

Gruppo Coll. di Trento, INFN, Padua, Italy

fYear

2013

fDate

Oct. 27 2013-Nov. 2 2013

Firstpage

1

Lastpage

6

Abstract

We report on the characterization of a new version of double-sided 3D sensors fabricated at FBK (Trento, Italy). Owing to a modified design and improved technology, the new devices feature a sizable increase of the breakdown voltage with respect to the ones previously fabricated at FBK. Before irradiation, the breakdown voltage is in the range from ~70 V to ~ 130 V, after irradiation up to large fluences, it is typically larger than 200 V, that is high enough for proper 3D sensor biasing even after very high radiation fluences like those foreseen at the High Luminosity LHC.

Keywords

silicon radiation detectors; 3D sensor biasing; FBK double-sided silicon 3D sensors; High Luminosity LHC; Italy; Trento; breakdown voltage; high radiation fluences; Current measurement; Protons; Radiation effects; Sensors; Temperature measurement; Three-dimensional displays; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE

Conference_Location

Seoul

Print_ISBN

978-1-4799-0533-1

Type

conf

DOI

10.1109/NSSMIC.2013.6829540

Filename

6829540