• DocumentCode
    687101
  • Title

    Leading edge of the technological developments of Planar Pixel Sensors and prospects for ATLAS HL-LHC upgrade

  • Author

    Lounis, Abdenour

  • Author_Institution
    Lab. de l´Accelerateur Lineaire d´Orsay, France
  • fYear
    2013
  • fDate
    Oct. 27 2013-Nov. 2 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    To investigate the suitability of pixel sensors using the proven planar technology for the upgraded tracker, the ATLAS Planar Pixel Sensor R&D Project was established comprising 18 institutes and more than 80 scientists. Main areas of research are the performance of planar pixel sensors at highest fluences, the exploration of possibilities for cost reduction to enable the instrumentation of large areas, the achievement of slim or active edges to provide low geometric inefficiencies without the need for shingling of modules and the investigation of the operation of highly irradiated sensors at low thresholds to increase the efficiency. Most important of the recent accomplishments obtained in research institutes members of the R&D project is given. In addition, the production of prototype sensors also for the outer layers has seen significant progress within the recent months and first characterization results will be shown. On the topic of edge efficiencies, substantial achievements have been made in view of planar active edges. We will show results from successful productions with two vendors. In addition, the status of the SCP post-processing technology will be summarized; this process could be applied to most sensors independent of their manufacturer which enables the creation of almost active edges even for originally non-slim-edge sensors.
  • Keywords
    cost reduction; research and development; semiconductor counters; ATLAS HL-LHC upgrade; ATLAS Planar Pixel Sensor R&D Project; SCP post-processing technology; active edges; cost reduction; highly irradiated sensors; low geometric inefficiencies; nonslim-edge sensors; planar active edges; planar technology; prototype sensor production; research institute members; technological developments; upgraded tracker; Detectors; Implants; Production; Radiation effects; Semiconductor process modeling; Sensor phenomena and characterization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE
  • Conference_Location
    Seoul
  • Print_ISBN
    978-1-4799-0533-1
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2013.6829542
  • Filename
    6829542