Fabrication of Silicon-Photomultiplier multi arrays and the performance test

SiPM (Silicon Photomultiplier) is a semiconductor light diode comprised of many micropixels. Due to its positive characteristics, SiPM is considered as the next generation model of silicon photo amplifier. A photo-sensor made by multi arrays of SiPM sensors can even takes an image at the environment of old(dark) moon. Array of SiPMs with a minimum gap between the sensors is needed for some applications where a fine imaging of sources with low intensity radiations is required. We have attempted to fabricate SiPM sensors in various forms of arrays from the lithographic process in order to apply them in imaging astrophysical objects with low intensity. In the first process of the fabrication, we have produced various sizes of single SiPM sensors and also the arrays. The design includes unit sensors in the size of 0.5mm × 0.5mm, consisting of 10³ micropixles with the maximum geometric efficiency of 70%. One of the arrays produced is 8 × 8 matrix of the unit sensors with the sensors gap of 60 um. We have tested the sensor arrays for the electrical characteristics and the dark rates. Details in the sensor and array design, the fabrication procedure, and the results of the performance test with the output from the first production are presented.