Influence of X-ray irradiation on the properties of the Hamamatsu silicon photomultiplier S10362-11-050C

Author

Chen Xu ; Hellweg, Wolf Lukas ; Garutti, Erika ; Klanner, Robert

Author_Institution

DESY, Hamburg, Germany

fYear

2013

fDate

Oct. 27 2013-Nov. 2 2013

Firstpage

1

Lastpage

8

Abstract

We have investigated the effects of X-ray radiation of doses of 0, 200 Gy, and 20 kGy on the Hamamatsu silicon-photomultiplier (SiPM) S10362-11-050P. From current-voltage, capacitance/conductance-voltage, pulse-shape and pulse-height measurements, the SiPM characteristics below and above breakdown voltage were determined. Significant changes are observed, however, the changes above the breakdown voltage hardly affect the operation of SiPMs. We conclude that the operation of the Hamamatsu SiPM as high-gain photodetector is hardly affected by X-ray radiation damage in the dose range investigated.

Keywords

X-ray effects; dosimetry; photodetectors; photomultipliers; silicon radiation detectors; Hamamatsu silicon photomultiplier properties; S10362-11-050C; S10362-11-050P; SiPM characteristics; X-ray irradiation effect; X-ray radiation damage; breakdown voltage; high-gain photodetector; pulse-height measurement; pulse-shape measurement; radiation doses; Capacitance; Current measurement; Electrical resistance measurement; Frequency measurement; Radiation effects; Resistance; Resistors; MPPC; Silicon photomultiplier; X-ray radiation damage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE

Conference_Location

Seoul

Print_ISBN

978-1-4799-0533-1

Type

conf

DOI

10.1109/NSSMIC.2013.6829718

Filename

6829718