Radiation damage effects in Silicon Photo-Multipliers

Author

Andreotti, Marcus ; Baldini, W. ; Calabrese, R. ; Cibinetto, G. ; Ramusino, A. Cotta ; Dedonato, C. ; Fiorini, Mattia ; Luppi, E. ; Malaguti, R. ; Montanari, Alessandro ; Pietropaolo, Andrea ; Santoro, Vincenzo ; Tellarini, G. ; Tomassetti, L. ; Tosi, Nic

Author_Institution

Dipt. di Fis. e Sci. della Terra, Univ. di Ferrara, Ferrara, Italy

fYear

2013

fDate

Oct. 27 2013-Nov. 2 2013

Firstpage

1

Lastpage

4

Abstract

In this paper we present a study of the neutrons-induced damage in Silicon Photo-Multipliers. Twenti-six devices, produced by AdvanSiD, Hamamatsu and SensL, have been irradiated at the Geel Electron LINear Accelerator (GELINA) in Belgium on a nearly white neutron beam. The total 1 MeV equivalent integrated dose was 6.2×10⁹n_eq/cm². Photodetector performances have been measured during the whole irradiation period and a gradual worsening of the detector properties, like dark current and charge spectra, has been observed. An extensive comparison of the performances of all the devices will be presented.

Keywords

neutron beams; photodetectors; photomultipliers; radiation effects; silicon radiation detectors; AdvanSiD; GELINA; Geel Electron LINear Accelerator; charge spectra; dark current; electron volt energy 1 MeV; gradual worsening; integrated dose; photodetector; radiation damage effect; silicon photomultipliers; white neutron beam; Current measurement; Dark current; Neutrons; Performance evaluation; Radiation effects; Silicon; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE

Conference_Location

Seoul

Print_ISBN

978-1-4799-0533-1

Type

conf

DOI

10.1109/NSSMIC.2013.6829721

Filename

6829721