The impact of active area geometry and electrophysical characteristics on X-ray sensitivity and spatial resolution of GaAs:Cr radiation sensors

Author

Lozinskaya, A. ; Tyazhev, Aleksey ; Tolbanov, O. ; Zarubin, A. ; Mokeev, D. ; Vorobiev, Alexey

Author_Institution

Tomsk State Univ., Tomsk, Russia

fYear

2013

fDate

Oct. 27 2013-Nov. 2 2013

Firstpage

1

Lastpage

3

Abstract

The results of calculations and experimental studies of pulse height distribution, sensitivity and spatial resolution dependences on detector´s contact area and electric field profiles in chromium compensated gallium arsenide (GaAs:Cr) radiation sensors are presented. Mathematical modeling of electric field distribution for various contact and active area sizes were made. It is shown that spatial resolution is determined not only by the mobility-lifetime product, but also by polarity of applied bias. Several methods were suggested to improve energy resolution of GaAs:Cr sensors.

Keywords

X-ray detection; carrier mobility; electric fields; gallium arsenide; GaAs-Cr; X-ray sensitivity; active area geometry impact; detector contact area; electric field distribution; electrophysical characteristics; mathematical modeling; mobility lifetime product; polarity; pulse height distribution; radiation sensor; spatial resolution; Arrays; Cathodes; Detectors; Sensitivity; Sensor phenomena and characterization; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE

Conference_Location

Seoul

Print_ISBN

978-1-4799-0533-1

Type

conf

DOI

10.1109/NSSMIC.2013.6829835

Filename

6829835