Characterization of non-equilibrium carriers in CdZnTe crystal using time-of-fight technique

Time-of-Fight technique is an effective way to obtain the drift mobility and recombination life time of CdZnTe crystal. The recombination, drift and diffusion of non-equilibrium carrier all influence the light induced current. But in different time, the attenuation of the photocurrent is relay on different processes. In this letter, we separate the decay of the pulse laser induced current to three parts, so the analysis of the non-equilibrium carriers in CdZnTe crystal is precise. And we also use IV measurements and measurements gamma ray spectra to characterize the carriers in CdZnTe crystal.