Title :
Distributed feedback 3.27 μm diode lasers with continuous-wave output power above 15 mw at room temperature
Author :
Liang, Robert ; Hosoda, T. ; Shterengas, L. ; Stein, Aaron ; Lu, Min ; Kipshidze, G. ; Belenky, G.
Author_Institution :
Stony Brook Univ., Stony Brook, NY, USA
fDate :
September 11 2014
Abstract :
GaSb-based type-I quantum well laterally coupled distributed feedback diode lasers emitting in the methane absorption band near 3.27 μm were designed and fabricated. The first-order index grating with a period of 480 nm was defined by e-beam lithography and etched on both sides of 6 μm-wide shallow ridge waveguide. Coated 2 mm-long devices demonstrated stable continuous-wave single-frequency operation in a wide temperature range with an output power of 15 mW at +17°C and 40 mW at -20°C. The Bragg wavelength temperature tuning rate was ~0.27 nm/K.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; electron beam lithography; gallium compounds; laser tuning; organic compounds; quantum well lasers; ridge waveguides; Bragg wavelength temperature tuning rate; GaSb; continuous wave output power; e-beam lithography; first-order index grating; methane absorption band; power 15 mW to 40 mW; shallow ridge waveguide; size 2 mm; temperature 17 degC to -20 degC; temperature 293 K to 298 K; type-I quantum well laterally coupled distributed feedback diode lasers; wavelength 3.27 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2014.2733