• DocumentCode
    68740
  • Title

    Distributed feedback 3.27 μm diode lasers with continuous-wave output power above 15 mw at room temperature

  • Author

    Liang, Robert ; Hosoda, T. ; Shterengas, L. ; Stein, Aaron ; Lu, Min ; Kipshidze, G. ; Belenky, G.

  • Author_Institution
    Stony Brook Univ., Stony Brook, NY, USA
  • Volume
    50
  • Issue
    19
  • fYear
    2014
  • fDate
    September 11 2014
  • Firstpage
    1378
  • Lastpage
    1380
  • Abstract
    GaSb-based type-I quantum well laterally coupled distributed feedback diode lasers emitting in the methane absorption band near 3.27 μm were designed and fabricated. The first-order index grating with a period of 480 nm was defined by e-beam lithography and etched on both sides of 6 μm-wide shallow ridge waveguide. Coated 2 mm-long devices demonstrated stable continuous-wave single-frequency operation in a wide temperature range with an output power of 15 mW at +17°C and 40 mW at -20°C. The Bragg wavelength temperature tuning rate was ~0.27 nm/K.
  • Keywords
    III-V semiconductors; diffraction gratings; distributed feedback lasers; electron beam lithography; gallium compounds; laser tuning; organic compounds; quantum well lasers; ridge waveguides; Bragg wavelength temperature tuning rate; GaSb; continuous wave output power; e-beam lithography; first-order index grating; methane absorption band; power 15 mW to 40 mW; shallow ridge waveguide; size 2 mm; temperature 17 degC to -20 degC; temperature 293 K to 298 K; type-I quantum well laterally coupled distributed feedback diode lasers; wavelength 3.27 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2014.2733
  • Filename
    6898657