Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier

Author

Yi An Yin ; Naiyin Wang ; Guanghan Fan ; Shuti Li

Author_Institution

Inst. of Optoelectron. Mater. & Technol., South China Normal Univ., Guangzhou, China

Volume

61

Issue

8

fYear

2014

fDate

Aug. 2014

Firstpage

2849

Lastpage

2853

Abstract

The advantages of GaN-based light-emitting diodes with polarization-reduced chirped multiquantum barrier (PR-CMQB) as electron blocking layer (EBL) are investigated numerically and experimentally. Both simulation and experiment results indicate that the LED with PR-CMQB possesses higher internal quantum efficiency and light output power as compared with its counterparts with either conventional single AlGaN EBL or CMQB. These improvements are mainly attributed to the suppression of electron leakage and the enhancement of hole injection efficiency. Furthermore, the efficiency droop is markedly reduced when the PR-CMQB is employed.

Keywords

III-V semiconductors; gallium compounds; light emitting diodes; polarisation; quantum optics; EBL; GaN; PR-CMQB; efficiency droop; electron blocking layer; electron leakage suppression; high internal quantum efficiency; high light output power; hole injection efficiency; light-emitting diodes; polarization-reduced chirped multiquantum barrier; Aluminum gallium nitride; Charge carrier processes; Chirp; Gallium nitride; Light emitting diodes; Periodic structures; Power generation; Electron blocking layer (EBL); light-emitting diodes (LEDs); multiquantum barrier (MQB); polarization; polarization.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2330374

Filename

6843356