Impacts of the Thermal Recovery Process on In–Ga–Zn–O (IGZO) TFTs

Author

Seung-Ha Choi ; Myung-Hoon Lim ; Woo-Shik Jung ; Jin-Hong Park

Author_Institution

Sch. of Electron. & Electr. Eng., Sungkyunkwan Univ., Suwon, South Korea

Volume

35

Issue

8

fYear

2014

fDate

Aug. 2014

Firstpage

835

Lastpage

837

Abstract

In this letter, we investigate the impact of the thermal recovery (annealing) process on the electrical characteristics and the stability of IGZO TFTs in terms of: 1) vertical/lateral diffusion of Ti atoms into the IGZO channel region from the source/drain electrode and 2) recovery or local rearrangement of ions in IGZO. Although low thermal recovery temperatures <;300 °C are required to avoid the Ti diffusion that degrades IGZO TFT electrical characteristics, the TFT devices fabricated below 300 °C becomes very unstable in gate/drain electrical-stresses as a tradeoff.

Keywords

II-VI semiconductors; III-V semiconductors; annealing; diffusion; gallium compounds; indium compounds; stress effects; thin film transistors; zinc compounds; In-Ga-Zn-O; TFT; annealing; gate-drain electrical stresses; source-drain electrode; thermal recovery; thin film transistors; Annealing; Atomic measurements; Electrodes; Logic gates; Stress; Thermal stability; Thin film transistors; IGZO; TFT; Ti diffusion; and gate/drain-stress.; gate/drain-stress; short channel effect; stability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2329911

Filename

6843358