• DocumentCode
    688571
  • Title

    Finding defects in a 22 nm node wafer with visible light

  • Author

    Renjie Zhou ; Popescu, Gabriel ; Goddard, L.L.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
  • fYear
    2013
  • fDate
    9-14 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Despite a diffraction limited lateral resolution of 360 nm, we detected 20 nm by 110 nm defects in a patterned 22 nm node wafer using quantitative phase and amplitude images from epiillumination diffraction phase microscopy.
  • Keywords
    image resolution; light diffraction; lighting; optical images; optical microscopy; photodetectors; visible spectra; diffraction limited lateral resolution; epiillumination diffraction phase microscopy; node wafer defects; quantitative amplitude images; quantitative phase images; size 22 nm; visible light; Diffraction; Image resolution; Microscopy; Noise; Optical diffraction; Optical imaging; Optical microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2013 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6832945
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=688571