A study of mechanical lift-off technology for high-efficiency vertical LEDs using Micro-Porous GaN template

Author

Chia-Yu Lee ; Da-Wei Lin ; Che-Yu Liu ; Shih-Chieh Hsu ; Hao-Chung Kuo ; Shing-Chung Wang ; Chun-Yen Chang

Author_Institution

Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2013

fDate

9-14 June 2013

Firstpage

1

Lastpage

2

Abstract

The high efficiency vertical light emitting diodes (V-LEDs) using mechanical lift-off with Micro-Porous GaN template formed by high temperature molten KOH wet etching process were demonstrated. The average threading dislocation density (TDD) of u-GaN after regrowth was estimated by transmission electron microscopy (TEM) reduced from 2×10⁹ to 1×10⁸ cm^-2. The sapphire substrate was easily removed by mechanical lift-off during wafer bonding process. The light output of V-LEDs are greatly enhanced by 100% compared with Conventional-LEDs at an operating current of 20 mA due to the high quality thin GaN and excellent heating dissipation.

Keywords

dislocation density; etching; gallium compounds; light emitting diodes; porous semiconductors; transmission electron microscopy; wide band gap semiconductors; KOH wet etching; TEM; V-LED; heating dissipation; high-efficiency vertical LED; mechanical lift-off technology; microporous GaN template; sapphire substrate; threading dislocation density; transmission electron microscopy; Educational institutions; Gallium nitride; Gold; Light emitting diodes; Nickel; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2013 Conference on

Conference_Location

San Jose, CA

Type

conf

Filename

6832977