• DocumentCode
    688656
  • Title

    Demonstration of true green ITO clad semipolar InGaN/GaN laser diodes

  • Author

    Hardy, M.T. ; Holder, C.O. ; Nakamura, Shigenari ; Speck, James S. ; Cohen, D.A. ; DenBaars, Steven P.

  • Author_Institution
    Mater. Dept., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
  • fYear
    2013
  • fDate
    9-14 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Non-epitaxial cladding layers have advantages for green laser diodes in terms of reduced p-cladding resistance and reduced active region thermal damage. We demonstrate true green semipolar InGaN/GaN laser diodes with ITO cladding grown on semipolar GaN substrates.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; quantum well lasers; tin compounds; GaN; ITO-InGaN-GaN; nonepitaxial cladding layers; p-cladding resistance; reduced active region thermal damage; semipolar GaN substrates; true green ITO clad semipolar (202̅1) InGaN/GaN laser diodes; Diode lasers; Gallium nitride; Green products; Indexes; Indium tin oxide; Optical waveguides; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2013 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6833031
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=688656