Title :
GaInAsSb-AlGaAsSb laterally coupled distributed-feedback metamorphic laser grown on a GaAs substrate at 2 μm
Author :
Apiratikul, Paveen ; Lei He ; Richardson, C.J.K.
Author_Institution :
Lab. for Phys. Sci., College Park, MD, USA
Abstract :
We report a metamorphic GaSb-based laterally coupled distributed-feedback laser grown on a GaAs substrate that operates continuous wave at room temperature with a total output power of 40 mW.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor lasers; GaAs; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb laterally coupled distributed-feedback metamorphic laser; continuous wave operation; laser output power; power 40 mW; room temperature; temperature 293 K to 298 K; Gallium arsenide; Gas lasers; Gratings; Laser modes; Power lasers; Semiconductor lasers; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
