• DocumentCode
    688831
  • Title

    Plasmonic-polarization enhancement of novel GaN/AlN quantum cascade detector

  • Author

    Pesach, Asaf ; Sakr, Salam ; Giraud, E. ; Tchernycheva, Maria ; Orenstein, Meir ; Grandjean, Nicolas ; Julien, F.H. ; Bahir, Gad

  • Author_Institution
    Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
  • fYear
    2013
  • fDate
    9-14 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A novel GaN/AlN quantum cascade detector with simplified alloy extractor is integrated with metallic holes´ array. Rotation of polarization by surface plasmons under normal incidence results in ×10 enhancement of responsivity at room temperature.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; integrated optics; optical arrays; optical rotation; photodetectors; plasmonics; quantum well devices; surface plasmons; GaN-AlN; gallium nitride-aluminium nitride quantum cascade detector; integrated optics; metallic hole array; optical rotation; plasmonic-polarization enhancement; room temperature; surface plasmons; temperature 293 K to 298 K; Aluminum gallium nitride; Arrays; Detectors; Gallium nitride; III-V semiconductor materials; Plasmons;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2013 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6833207