• DocumentCode
    689018
  • Title

    Vertical silicon nanowire photodetectors: Spectral sensitivity via nanowire radius

  • Author

    Hyunsung Park ; Yaping Dan ; Kwanyong Seo ; Yu, Ya Jun ; Duane, Peter K. ; Wober, Munib ; Crozier, Kenneth B.

  • Author_Institution
    Sch. of Eng. & Appl. Sci., Harvard Univ., Cambridge, MA, USA
  • fYear
    2013
  • fDate
    9-14 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate that vertical silicon nanowires function as photodetectors whose spectral sensitivities are controlled by choice of nanowire radius. The measured external quantum efficiencies of fabricated devices are compared to electromagnetic simulations.
  • Keywords
    elemental semiconductors; nanowires; photodetectors; semiconductor quantum wires; silicon; Si; electromagnetic simulations; external quantum efficiencies; nanowire radius; spectral sensitivity; vertical silicon nanowire photodetectors; Contacts; Image color analysis; Indium tin oxide; Optical device fabrication; Optical imaging; Photodetectors; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2013 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6833398
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=689018