Title :
Extremely wide lasing bandwidth from InAs/InP quantum-dash ridge-waveguide laser near 1.6 μm
Author :
Khan, M.Z.M. ; Ng, Tien Khee ; Lee, Ching-Sung ; Bhattacharya, Pallab ; Ooi, Boon S.
Author_Institution :
Photonics Lab., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
Abstract :
We demonstrate an ultra-broad lasing bandwidth (-3dB) of > 50 nm utilizing InAs/InGaAlAs/InP quantum-dash ridge-waveguide laser using chirped AlGaInAs barrier layer thickness. Our device exhibits a recorded bandwidth and significant improvement of laser characteristics.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; quantum dash lasers; waveguide lasers; InAs-InGaAlAs-InP; chirped AlGaInAs barrier layer thickness; extremely wide lasing bandwidth; quantum-dash ridge-waveguide laser; ultrabroad lasing bandwidth; Bandwidth; Cavity resonators; Chirp; Semiconductor lasers; Stimulated emission; Temperature;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
