DocumentCode
689276
Title
Passive and hybrid mode-locking from a monolithic InGaN/GaN laser diode
Author
Olle, Vojtech F. ; Wonfor, Adrian ; Sulmoni, L.A.M. ; Vasil´ev, P.P. ; Lamy, J.-M. ; Carlin, Jean-Francois ; Grandjean, Nicolas ; Penty, Richard V. ; White, Ian H.
Author_Institution
Eng. Dept., Univ. of Cambridge, Cambridge, UK
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
We report 4ps and 8ps pulse generation from a two-section monolithic InGaN/GaN laser by hybrid and passive mode-locking, respectively. Pulse trains at a repetition rate of 28.6GHz and an emission wavelength of 422nm are generated.
Keywords
III-V semiconductors; gallium compounds; indium compounds; laser mode locking; optical pulse generation; semiconductor lasers; wide band gap semiconductors; InGaN-GaN; hybrid mode-locking; monolithic InGaN-GaN laser diode; passive mode-locking; pulse generation; pulse trains; repetition rate; time 4 ps; time 8 ps; wavelength 422 nm; Diode lasers; Gallium nitride; Laser mode locking; Optical interferometry; Optical pulse generation; Radio frequency; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6833659
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