• DocumentCode
    689280
  • Title

    Self-mode-locked vertical external-cavity surface-emitting laser (VECSEL)

  • Author

    Albrecht, Alexander R. ; Seletskiy, D.V. ; Cederberg, Jeffrey G. ; Sheik-Bahae, Mansoor

  • Author_Institution
    Phys. & Astron. Dept., Univ. of New Mexico, Albuquerque, NM, USA
  • fYear
    2013
  • fDate
    9-14 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Self-mode-locking has been observed in an InGaAs VECSEL at 1030 nm with sub-500 fs pulses at 1 GHz. The mechanism is attributed to negative ultrafast Kerr lensing in the gain structure.
  • Keywords
    III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; laser mode locking; optical Kerr effect; surface emitting lasers; InGaAs; frequency 1 GHz; indium gallium arsenide VECSEL; negative ultrafast Kerr lensing; self-mode-locked vertical external-cavity surface-emitting laser; subfemtosecond pulses; time 500 fs; wavelength 1030 nm; Apertures; Cavity resonators; Laser excitation; Pump lasers; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2013 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6833663