• DocumentCode
    689335
  • Title

    Room temperature polariton lasing from GaN nanowire array in a dielectric microcavity

  • Author

    Bo Xiao ; Junseok Heo ; Jahangir, Shafat ; Bhattacharya, Pallab

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2013
  • fDate
    9-14 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Polariton lasing from epitaxially grown GaN nanowire array embedded in a dielectric microcavity is demonstrated at room temperature under optical excitation. Simulations of cavity mode and polariton emission characteristics of the device are presented.
  • Keywords
    III-V semiconductors; epitaxial growth; gallium compounds; laser beams; laser modes; microcavity lasers; nanophotonics; nanowires; polaritons; semiconductor laser arrays; GeN; device cavity mode; device polariton emission characteristics; dielectric microcavity; epitaxially grown GaN nanowire array; optical excitation; room temperature polariton lasing; temperature 293 K to 298 K; Arrays; Cavity resonators; Dielectrics; Excitons; Gallium nitride; Lasers; Microcavities;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2013 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6833718
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=689335